Publication Information

Title: Very high frequency plasma reactant for atomic layer deposition

Type: Journal

Info: Applied Surface Science 387 (2016) 109 - 117

Date: 2016-06-08

DOI: http://dx.doi.org/10.1016/j.apsusc.2016.06.048

Author Information

Name

Institution

Yonsei University

Yonsei University

Yonsei University

Sungkyunkwan University

Sungkyunkwan University

Ulsan National Institute of Science and Technology

Ulsan National Institute of Science and Technology

Yonsei University

Yonsei University

Yonsei University

Incheon National University

Films

Plasma Al2O3 using Custom

Deposition Temperature Range N/A

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Interlayer

TEM, Transmission Electron Microscope

-

Conformality, Step Coverage

Unknown

-

Morphology, Roughness, Topography

Unknown

-

Dielectric Constant, Permittivity

Unknown

-

Leakage Current

Unknown

-

Interface Trap Density

Unknown

-

Substrates

Silicon

Keywords

Notes

976



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