Publication Information

Title: Very high frequency plasma reactant for atomic layer deposition

Type: Journal

Info: Applied Surface Science 387 (2016) 109 - 117

Date: 2016-06-08

DOI: http://dx.doi.org/10.1016/j.apsusc.2016.06.048

Author Information

Name

Institution

Yonsei University

Yonsei University

Yonsei University

Sungkyunkwan University

Sungkyunkwan University

Ulsan National Institute of Science and Technology

Ulsan National Institute of Science and Technology

Yonsei University

Yonsei University

Yonsei University

Incheon National University

Films

Plasma Al2O3 using Custom

Deposition Temperature Range N/A

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Interlayer

TEM, Transmission Electron Microscope

Unknown

Conformality, Step Coverage

Unknown

Unknown

Morphology, Roughness, Topography

Unknown

Unknown

Dielectric Constant, Permittivity

Unknown

Unknown

Leakage Current

Unknown

Unknown

Interface Trap Density

Unknown

Unknown

Substrates

Silicon

Keywords

Notes

976



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