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Very high frequency plasma reactant for atomic layer deposition

Type:
Journal
Info:
Applied Surface Science 387 (2016) 109 - 117
Date:
2016-06-08
DOI:
http://dx.doi.org/10.1016/j.apsusc.2016.06.048

Author Information

Name Institution
Il-Kwon OhYonsei University
Gilsang YooYonsei University
Chang Mo YoonYonsei University
Tae Hyung KimSungkyunkwan University
Geun Young YeomSungkyunkwan University
Kangsik KimUlsan National Institute of Science and Technology
Zonghoon LeeUlsan National Institute of Science and Technology
Hanearl JungYonsei University
Chang Wan LeeYonsei University
Hyungjun KimYonsei University
Han-Bo-Ram LeeIncheon National University

Films

Plasma Al2O3

Hardware used: SNTEK Co. ALD 5008
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Interlayer
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Conformality, Step Coverage
Analysis: -
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: -
Diagnostic: -

Characteristic: Dielectric Constant, Permittivity
Analysis: -
Diagnostic: -

Characteristic: Leakage Current
Analysis: -
Diagnostic: -

Characteristic: Interface Trap Density
Analysis: -
Diagnostic: -

Substrates

Silicon

Notes

976