
Very high frequency plasma reactant for atomic layer deposition
Type:
Journal
Info:
Applied Surface Science 387 (2016) 109 - 117
Date:
2016-06-08
Author Information
Name | Institution |
---|---|
Il-Kwon Oh | Yonsei University |
Gilsang Yoo | Yonsei University |
Chang Mo Yoon | Yonsei University |
Tae Hyung Kim | Sungkyunkwan University |
Geun Young Yeom | Sungkyunkwan University |
Kangsik Kim | Ulsan National Institute of Science and Technology |
Zonghoon Lee | Ulsan National Institute of Science and Technology |
Hanearl Jung | Yonsei University |
Chang Wan Lee | Yonsei University |
Hyungjun Kim | Yonsei University |
Han-Bo-Ram Lee | Incheon National University |
Films
Plasma Al2O3
Film/Plasma Properties
Characteristic: Interlayer
Analysis: TEM, Transmission Electron Microscope
Characteristic: Conformality, Step Coverage
Analysis: -
Characteristic: Morphology, Roughness, Topography
Analysis: -
Characteristic: Dielectric Constant, Permittivity
Analysis: -
Characteristic: Leakage Current
Analysis: -
Characteristic: Interface Trap Density
Analysis: -
Substrates
Silicon |
Notes
976 |