Minority carrier lifetime limitations in Si wafer solar cells with gallium phosphide window layers
Type:
Journal
Info:
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)
Date:
2016-06-05
Author Information
| Name | Institution |
|---|---|
| S. Janz | Fraunhofer Institute for Solar Energy Systems (ISE) |
| M. Feifel | Fraunhofer Institute for Solar Energy Systems (ISE) |
| J. Ohlmann | Fraunhofer Institute for Solar Energy Systems (ISE) |
| J. Benick | Fraunhofer Institute for Solar Energy Systems (ISE) |
| C. Weiss | Fraunhofer Institute for Solar Energy Systems (ISE) |
| M. Hermle | Fraunhofer Institute for Solar Energy Systems (ISE) |
| A. W. Bett | Fraunhofer Institute for Solar Energy Systems (ISE) |
| F. Dimroth | Fraunhofer Institute for Solar Energy Systems (ISE) |
| D. Lackner | Fraunhofer Institute for Solar Energy Systems (ISE) |
Films
Film/Plasma Properties
Characteristic: Minority Carrier Lifetime
Analysis: QSSPC, Quasi-Steady-State PhotoConductance Decay
Substrates
| Silicon |
Notes
| 951 |