Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment

Type:
Journal
Info:
Microelectronic Engineering 178 (2017) 217 - 220
Date:
2017-05-12
DOI:
https://doi.org/10.1016/j.mee.2017.05.032

Author Information

Name Institution
Ki-Sik ImKyungpook National University
Jeong-Gil KimKyungpook National University
Sindhuri VodapallyKyungpook National University
Raphaël CaulmiloneSOITEC
Sorin CristoloveanuInstitut National Polytechnique de Grenoble - INPG
Jung-Hee LeeKyungpook National University

Films

Plasma Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Flat Band Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Effective Oxide Charge, Qeff
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Substrates

GaN

Notes

1037