Publication Information

Title:
Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment
Type:
Journal
Info:
Microelectronic Engineering 178 (2017) 217 - 220
Date:
2017-05-12

Author Information

Name Institution
Ki-Sik ImKyungpook National University
Jeong-Gil KimKyungpook National University
Sindhuri VodapallyKyungpook National University
Raphaƫl CaulmiloneSOITEC
Sorin CristoloveanuInstitut National Polytechnique de Grenoble - INPG
Jung-Hee LeeKyungpook National University

Films

Plasma Al2O3


Film/Plasma Properties

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Effective Oxide Charge, Qeff
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

GaN

Keywords

Notes

1037