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Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition
Hydrogen-induced abstraction mechanism of surface methyl groups in atomic-layer-epitaxy of germanium
Hydrogen-plasma-assisted hybrid atomic layer deposition of Ir thin film as novel Cu diffusion barrier
Self-limiting diamond growth from alternating CFx and H fluxes
Sub-10-nm ferroelectric Gd-doped HfO2 layers
Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment
Type:
Journal
Info:
Microelectronic Engineering 178 (2017) 217 - 220
Date:
2017-05-12
Author Information
| Name | Institution |
|---|---|
| Ki-Sik Im | Kyungpook National University |
| Jeong-Gil Kim | Kyungpook National University |
| Sindhuri Vodapally | Kyungpook National University |
| Raphaël Caulmilone | SOITEC |
| Sorin Cristoloveanu | Institut National Polytechnique de Grenoble - INPG |
| Jung-Hee Lee | Kyungpook National University |
Films
Film/Plasma Properties
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Effective Oxide Charge, Qeff
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
| GaN |
Keywords
Notes
| 1037 |