The publication database currently has 1652 entries.
Use Advanced Search for more complex searches
Recent Database Additions
Optical in situ monitoring of plasma-enhanced atomic layer deposition process
The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
The Applications of Ultra-Thin Nanofilm for Aerospace Advanced Manufacturing Technology
Texture of atomic layer deposited ruthenium
Comparative study of structural electrical dielectric and ferroelectric properties of HfO2 deposited by plasma-enhanced atomic layer deposition and radio frequency sputtering technique for the application in 1-T FeFET
Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment
Type:
Journal
Info:
Microelectronic Engineering 178 (2017) 217 - 220
Date:
2017-05-12
Author Information
| Name | Institution |
|---|---|
| Ki-Sik Im | Kyungpook National University |
| Jeong-Gil Kim | Kyungpook National University |
| Sindhuri Vodapally | Kyungpook National University |
| Raphaël Caulmilone | SOITEC |
| Sorin Cristoloveanu | Institut National Polytechnique de Grenoble - INPG |
| Jung-Hee Lee | Kyungpook National University |
Films
Film/Plasma Properties
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Effective Oxide Charge, Qeff
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
| GaN |
Keywords
Notes
| 1037 |