Publication Information

Title:
Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3
Type:
Journal
Info:
Applied Physics Letters 89, 042112 (2006)
Date:
2006-06-09

Author Information

Name Institution
Bram HoexEindhoven University of Technology
S. B. S. HeilEindhoven University of Technology
E. LangereisEindhoven University of Technology
Mauritius C. M. (Richard) van de SandenEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Plasma Al2O3


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Characteristic: Lifetime
Analysis: Photoconductance

Characteristic: Surface Recombination Velocity
Analysis: Photoconductance

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope

Substrates

Silicon

Keywords

Passivation
Solar

Notes

1437