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Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3
Type:
Journal
Info:
Applied Physics Letters 89, 042112 (2006)
Date:
2006-06-09
Author Information
| Name | Institution |
|---|---|
| Bram Hoex | Eindhoven University of Technology |
| S. B. S. Heil | Eindhoven University of Technology |
| E. Langereis | Eindhoven University of Technology |
| Mauritius C. M. (Richard) van de Sanden | Eindhoven University of Technology |
| Erwin (W.M.M.) Kessels | Eindhoven University of Technology |
Films
Plasma Al2O3
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Characteristic: Lifetime
Analysis: Photoconductance
Characteristic: Surface Recombination Velocity
Analysis: Photoconductance
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Substrates
| Silicon |
Notes
| 1437 |