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Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3 (010) and its suppressed interface state density
Type:
Journal
Info:
Japanese Journal of Applied Physics 55, 1202B5 (2016)
Date:
2016-08-07
Author Information
| Name | Institution |
|---|---|
| Takafumi Kamimura | National Institute of Information and Communications Technology |
| Daivasigamani Krishnamurthy | National Institute of Information and Communications Technology |
| A. Kuramata | Tamura Corporation |
| S. Yamakoshi | Tamura Corporation |
| M. Higashiwaki | National Institute of Information and Communications Technology |
Films
Plasma Al2O3
Film/Plasma Properties
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Substrates
| Ga2O3 |
Notes
| 893 |