Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3 (010) and its suppressed interface state density

Type:
Journal
Info:
Japanese Journal of Applied Physics 55, 1202B5 (2016)
Date:
2016-08-07

Author Information

Name Institution
Takafumi KamimuraNational Institute of Information and Communications Technology
Daivasigamani KrishnamurthyNational Institute of Information and Communications Technology
A. KuramataTamura Corporation
S. YamakoshiTamura Corporation
M. HigashiwakiNational Institute of Information and Communications Technology

Films

Plasma Al2O3


Film/Plasma Properties

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope

Substrates

Ga2O3

Keywords

Notes

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