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Publication Information

Title: Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3 (010) and its suppressed interface state density

Type: Journal

Info: Japanese Journal of Applied Physics 55, 1202B5 (2016)

Date: 2016-08-07

DOI: http://doi.org/10.7567/JJAP.55.1202B5

Author Information

Name

Institution

National Institute of Information and Communications Technology

National Institute of Information and Communications Technology

Tamura Corporation

Tamura Corporation

National Institute of Information and Communications Technology

Films

Deposition Temperature Range = 100-300C

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Capacitance

C-V, Capacitance-Voltage Measurements

Unknown

Interface Trap Density

C-V, Capacitance-Voltage Measurements

Unknown

Images

TEM, Transmission Electron Microscope

Unknown

Interfacial Layer

TEM, Transmission Electron Microscope

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

TEM, Transmission Electron Microscope

Unknown

Substrates

Ga2O3

Keywords

Notes

893



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