Effect of Al2O3 Buffer Layers on the Properties of Sputtered VO2 Thin Films

Type:
Journal
Info:
Nano-Micro Lett. (2017) 9: 29
Date:
2017-01-10
DOI:
http://dx.doi.org/10.1007/s40820-017-0132-x

Author Information

Name Institution
Dainan ZhangUniversity of Electronic Science and Technology of China
Tian-Long WenUniversity of Electronic Science and Technology of China
Ying XiongUniversity of Electronic Science and Technology of China
Donghong QiuUniversity of Electronic Science and Technology of China
Qi-Ye WenUniversity of Electronic Science and Technology of China

Films

Plasma Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: JEOL JSM-7600F

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Angstrom Advanced DX-2700

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Seiko Instruments SPA-300HV

Substrates

Si(001)

Notes

987