
Plasma and Thermal ALD of Al2O3 in a Commercial 200mm ALD Reactor
Type:
Journal
Info:
Journal of The Electrochemical Society, 154 (7) G165 (2007)
Date:
2007-03-05
Author Information
Name | Institution |
---|---|
J. L. van Hemmen | Eindhoven University of Technology |
S. B. S. Heil | Eindhoven University of Technology |
J. H. Klootwijk | Philips |
Fred Roozeboom | NXP Semiconductors Research |
Chris Hodson | Oxford Instruments |
Mauritius C. M. (Richard) van de Sanden | Eindhoven University of Technology |
Erwin (W.M.M.) Kessels | Eindhoven University of Technology |
Films
Thermal Al2O3
Plasma Al2O3
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Uniformity
Analysis: Ellipsometry
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Characteristic: Density
Analysis: Custom
Substrates
Silicon |
Notes
Left O2 on entire plasma run. Has reference for O2 gas not reacting with TMA. |
1718 |