Plasma and Thermal ALD of Al2O3 in a Commercial 200mm ALD Reactor

Type:
Journal
Info:
Journal of The Electrochemical Society, 154 (7) G165 (2007)
Date:
2007-03-05

Author Information

Name Institution
J. L. van HemmenEindhoven University of Technology
S. B. S. HeilEindhoven University of Technology
J. H. KlootwijkPhilips
Fred RoozeboomNXP Semiconductors Research
Chris HodsonOxford Instruments
Mauritius C. M. (Richard) van de SandenEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films


Plasma Al2O3


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Uniformity
Analysis: Ellipsometry

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements

Characteristic: Density
Analysis: Custom

Substrates

Silicon

Notes

Left O2 on entire plasma run. Has reference for O2 gas not reacting with TMA.
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