Introducing Plasma ALD, LLC's first in-house product.

An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

Contact us for more information.


Al2O3 multi-density layer structure as a moisture permeation barrier deposited by radio frequency remote plasma atomic layer deposition

Type:
Journal
Info:
JOURNAL OF APPLIED PHYSICS 115, 073502 (2014)
Date:
2014-02-05
DOI:
http://dx.doi.org/10.1063/1.4866001

Author Information

Name Institution
Hyunsoo JungHanyang University

Films

Plasma Al2O3

Hardware used: Custom
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 100C

Film/Plasma Properties

Substrates

Notes

201