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Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors
Designing Multifunctional Cobalt Oxide Layers for Efficient and Stable Electrochemical Oxygen Evolution
Hierarchical Atomic Layer Deposited V2O5 on 3D Printed Nanocarbon Electrodes for High-Performance Aqueous Zinc-Ion Batteries
Piezoelectric Properties of Zinc Oxide Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition
Experimental and numerical analysis of the effects of ion bombardment in silicon oxide (SiO2) plasma enhanced atomic layer deposition (PEALD) processes
Tuning the phase transitions of VO2 thin films on silicon substrates using ultrathin Al2O3 as buffer layers
Type:
Journal
Info:
J. Phys. D: Appl. Phys. 47 455304 2014
Date:
2014-09-29
Author Information
| Name | Institution |
|---|---|
| Ying Xiong | University of Electronic Science and Technology of China |
| Qi-Ye Wen | University of Electronic Science and Technology of China |
| Zhi Chen | University of Electronic Science and Technology of China |
| Wei Tian | University of Electronic Science and Technology of China |
| Tian-Long Wen | University of Electronic Science and Technology of China |
| Yu-Lan Jing | University of Electronic Science and Technology of China |
| Qing-Hui Yang | University of Electronic Science and Technology of China |
| Huai-Wu Zhang | University of Electronic Science and Technology of China |
Films
Film/Plasma Properties
Substrates
| Si(100) |
Keywords
| High-k Dielectric Thin Films |
Notes
| PEALD Al2O3 as buffer layer for VO2 sputter deposition. |
| 297 |