Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides

Type:
Journal
Info:
Nanoscale 2015, vol. 7, no. 24, pp. 10781-10789
Date:
2015-05-25
DOI:
http://dx.doi.org/10.1039/C5NR01128K

Author Information

Name Institution
Amirhasan NourbakhshIMEC
Christoph AdelmannIMEC
Yi SongMIT
Chang Seung LeeSamsung Advanced Institute of Technology
Inge AsselberghsIMEC
Cedric HuyghebaertIMEC
Simone BrizziBrandenburg University of Technology
Massimo TallaridaBrandenburg University of Technology
Dieter SchmeißerBrandenburg University of Technology
Sven Van ElshochtIMEC
Marc HeynsIMEC
Jing KongMIT
Tomas PalaciosMIT
Stefan De GendtIMEC

Films

Other Al2O3

Hardware used: Unknown
O2, Oxygen
CAS#: 7782-44-7
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Where to buy precursor
Deposition Temperature = 150C

Film/Plasma Properties

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Diagnostic: -

Substrates

Graphene

Notes

O2 plasma was used to create sites on the graphene prior to thermal ALD of Al2O3.
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