Publication Information

Title: Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides

Type: Journal

Info: Nanoscale 2015, vol. 7, no. 24, pp. 10781-10789

Date: 2015-05-25

DOI: http://dx.doi.org/10.1039/C5NR01128K

Author Information

Name

Institution

IMEC

IMEC

MIT

Samsung Advanced Institute of Technology

IMEC

IMEC

Brandenburg University of Technology

Brandenburg University of Technology

Brandenburg University of Technology

IMEC

IMEC

MIT

MIT

IMEC

Films

Other Al2O3 using Unknown

Deposition Temperature = 150C

7782-44-7

75-24-1

7732-18-5

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Microstructure

TEM, Transmission Electron Microscope

Unknown

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Unknown

Transistor Characteristics

Transistor Characterization

Unknown

Substrates

Graphene

Keywords

Notes

O2 plasma was used to create sites on the graphene prior to thermal ALD of Al2O3.

389



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