Publication Information

Title:
Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides
Type:
Journal
Info:
Nanoscale 2015, vol. 7, no. 24, pp. 10781-10789
Date:
2015-05-25

Author Information

Name Institution
Amirhasan NourbakhshIMEC
Christoph AdelmannIMEC
Yi SongMIT
Chang Seung LeeSamsung Advanced Institute of Technology
Inge AsselberghsIMEC
Cedric HuyghebaertIMEC
Simone BrizziBrandenburg University of Technology
Massimo TallaridaBrandenburg University of Technology
Dieter Schmei├čerBrandenburg University of Technology
Sven Van ElshochtIMEC
Marc HeynsIMEC
Jing KongMIT
Tomas PalaciosMIT
Stefan De GendtIMEC

Films

Other Al2O3

Hardware used: Unknown

CAS#: 7782-44-7


CAS#: 7732-18-5

Film/Plasma Properties

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization

Substrates

Graphene

Keywords

Notes

O2 plasma was used to create sites on the graphene prior to thermal ALD of Al2O3.
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