Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides

Type:
Journal
Info:
2015 Appl. Phys. Express 8 084101
Date:
2015-06-30
DOI:
http://dx.doi.org/10.7567/APEX.8.084101

Author Information

Name Institution
Po-Chun YehNational Taiwan University
Yun-Wei LinNational Dong Hwa University
Yue-Lin HuangNational Dong Hwa University
Jui-Hung HungNational Taiwan University
Bo-Ren LinNational Taiwan University
Lucas YangNational Taiwan University
Cheng-Han WuNational Taiwan University
Tzu-Kuan WuNational Taiwan University
Chao-Hsin WuNational Taiwan University
Lung-Han PengNational Taiwan University

Films

Plasma Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

Notes

547