Publication Information

Title:
Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides
Type:
Journal
Info:
2015 Appl. Phys. Express 8 084101
Date:
2015-06-30

Author Information

Name Institution
Po-Chun YehNational Taiwan University
Yun-Wei LinNational Dong Hwa University
Yue-Lin HuangNational Dong Hwa University
Jui-Hung HungNational Taiwan University
Bo-Ren LinNational Taiwan University
Lucas YangNational Taiwan University
Cheng-Han WuNational Taiwan University
Tzu-Kuan WuNational Taiwan University
Chao-Hsin WuNational Taiwan University
Lung-Han PengNational Taiwan University

Films

Plasma Al2O3


Film/Plasma Properties

Substrates

Keywords

Notes

547