Localized defect states and charge trapping in atomic layer deposited-Al2O3 films

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 35, 01B125 (2017)
Date:
2016-11-28
DOI:
http://dx.doi.org/10.1116/1.4971991

Author Information

Name Institution
Karsten HenkelBrandenburg University of Technology
Małgorzata KotBrandenburg University of Technology
Dieter SchmeißerBrandenburg University of Technology

Films

Thermal Al2O3

Hardware used: Custom
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Deposition Temperature Range = 25-280C

Thermal Al2O3

Hardware used: SENTECH
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 200C

Plasma Al2O3

Hardware used: SENTECH
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 25-200C

Film/Plasma Properties

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Synchrotron

Characteristic: Unknown
Analysis: X-ray Absorption Spectroscopy
Diagnostic: Synchrotron

Characteristic: Unknown
Analysis: resPES, resonant PhotoElectron Spectroscopy
Diagnostic: Synchrotron

Characteristic: Band Gap
Analysis: ELS, EELS, Electron Energy Loss Spectroscopy
Diagnostic: -

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent 4284A LCR Meter

Characteristic: Fixed Charge Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent 4284A LCR Meter

Substrates

Ru
Silicon
MAPbI3, methylammonium lead iodide

Notes

997