Publication Information

Title:
Localized defect states and charge trapping in atomic layer deposited-Al2O3 films
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 35, 01B125 (2017)
Date:
2016-11-28

Author Information

Name Institution
Karsten HenkelBrandenburg University of Technology
Małgorzata KotBrandenburg University of Technology
Dieter SchmeißerBrandenburg University of Technology

Films

Thermal Al2O3


Thermal Al2O3


Plasma Al2O3


Film/Plasma Properties

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Unknown
Analysis: X-ray Absorption Spectroscopy

Characteristic: Unknown
Analysis: resPES, resonant PhotoElectron Spectroscopy

Characteristic: Band Gap
Analysis: ELS, EELS, Electron Energy Loss Spectroscopy

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Fixed Charge Density
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

Ru
Silicon
MAPbI3, methylammonium lead iodide

Keywords

Notes

997