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An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

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Optical and electrical properties of Al:WS2 films prepared by atomic layer deposition and vulcanization

Type:
Journal
Info:
RSC Adv., 2016, 6, 64879-64884
Date:
2016-06-20
DOI:
http://dx.doi.org/10.1039/C6RA10474F

Author Information

Name Institution
Ning LiNorthwestern Polytechnical University
Li-ping FengNorthwestern Polytechnical University
Jie SuNorthwestern Polytechnical University
Wei ZengNorthwestern Polytechnical University
Zheng-tang LiuNorthwestern Polytechnical University

Films

Plasma Al:WO3

Hardware used: PEALD-200A, Jiaxing Kemicro Microelectronic
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
BTBMW, TBIDMW, bis(t-Butylimido) bis(DiMethylamido) Tungsten
CAS#: 406462-43-9
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

Quartz

Notes

835