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Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen
Type:
Journal
Info:
Applied Physics Letters 102, 132904 (2013)
Date:
2013-03-26
Author Information
| Name | Institution |
|---|---|
| Yukio Fukuda | Tokyo University of Science |
| Hiroki Ishizaki | Tokyo University of Science |
| Yohei Otani | Tokyo University of Science |
| Chiaya Yamamoto | University of Yamanashi |
| Junji Yamanaka | University of Yamanashi |
| Tetsuya Sato | University of Yamanashi |
| Toshiyuki Takamatsu | SST Inc. |
| Hiroshi Okamoto | Hirosaki University |
| Hidehumi Narita | Hirosaki University |
Films
Plasma Al2O3
Thermal Al2O3
Film/Plasma Properties
Characteristic: Capacitance
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: I-V, Current-Voltage Measurements
Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy
Substrates
| Ge |
Notes
| 579 |