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Publication Information

Title: Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen

Type: Journal

Info: Applied Physics Letters 102, 132904 (2013)

Date: 2013-03-26

DOI: http://dx.doi.org/10.1063/1.4801471

Author Information

Name

Institution

Tokyo University of Science

Tokyo University of Science

Tokyo University of Science

University of Yamanashi

University of Yamanashi

University of Yamanashi

SST Inc.

Hirosaki University

Hirosaki University

Films

Deposition Temperature = 300C

75-24-1

7782-44-7

Deposition Temperature = 300C

75-24-1

7732-18-5

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Capacitance

XPS, X-ray Photoelectron Spectroscopy

Unknown

Thickness

Ellipsometry

Unknown

Thickness

TEM, Transmission Electron Microscope

Unknown

Chemical Composition, Impurities

EDS, EDX, Energy Dispersive X-ray Spectroscopy

Unknown

Capacitance

C-V, Capacitance-Voltage Measurements

Agilent 4284A LCR Meter

Interface Trap Density

I-V, Current-Voltage Measurements

Agilent 4284A LCR Meter

Plasma Species

OES, Optical Emission Spectroscopy

Agilent 4284A LCR Meter

Substrates

Ge

Keywords

Notes

579


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