Publication Information

Title:
Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen
Type:
Journal
Info:
Applied Physics Letters 102, 132904 (2013)
Date:
2013-03-26

Author Information

Name Institution
Yukio FukudaTokyo University of Science
Hiroki IshizakiTokyo University of Science
Yohei OtaniTokyo University of Science
Chiaya YamamotoUniversity of Yamanashi
Junji YamanakaUniversity of Yamanashi
Tetsuya SatoUniversity of Yamanashi
Toshiyuki TakamatsuSST Inc.
Hiroshi OkamotoHirosaki University
Hidehumi NaritaHirosaki University

Films

Plasma Al2O3


Thermal Al2O3


Film/Plasma Properties

Characteristic: Capacitance
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface Trap Density
Analysis: I-V, Current-Voltage Measurements

Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy

Substrates

Ge

Keywords

Notes

579