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An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

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Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe

Type:
Conference Proceedings
Info:
EPJ Web of Conferences 133 , 02001 (2017)
Date:
2016-12-15
DOI:
http://dx.doi.org/10.1051/epjconf/201713302001

Author Information

Name Institution
Malgorzata Pociask-BialyUniversity of Rzeszow
Ihor IzhninCarat
Alexander VoitsekhovskiiNational Research Tomsk State University
Sergey NesmelovNational Research Tomsk State University
Stanislav DzyadukhNational Research Tomsk State University

Films

Plasma Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

HgCdTe

Notes

867