Plasma-Assisted Atomic Layer Deposition of Al2O3 at Room Temperature

Type:
Journal
Info:
Plasma Process. Polym. 2009, 6, S237-S241
Date:
2009-11-20
DOI:
http://dx.doi.org/10.1002/ppap.200930605

Author Information

Name Institution
Tommi O. KääriäinenLappeenranta University of Technology
David C. CameronLappeenranta University of Technology

Films

Plasma Al2O3

Hardware used: Beneq TFS-500
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 30C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000FI

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000FI

Characteristic: Film Structure
Analysis: ATR-FTIR
Diagnostic: Nicolet 4700 FT-IR

Characteristic: Unknown
Analysis: Internal Reflection
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: Hitachi S-4800 Field Emission Scanning Electron Microscope

Substrates

Si with native oxide

Notes

157