Publication Information

Title:
Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods
Type:
Journal
Info:
Korean J. Mater. Res. Vol. 27, No. 6 (2017)
Date:
2017-04-11

Author Information

Name Institution
Dae-Gyu YangChungnam National University
Yang-Soo KimChungnam National University
Jong-Heon KimChungnam National University
Hyoung-Do KimChungnam National University
Hyun-Suk KimChungnam National University

Films

Plasma Al2O3


Thermal Al2O3


Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Optical Properties
Analysis: UV-VIS Spectroscopy

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Extinction Coefficient
Analysis: Ellipsometry

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Dissipation Factors
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Substrates

Si(100)

Keywords

Plasma vs Thermal Comparison

Notes

Paper written in Korean with extra English version of abstract and English figure descriptions and labels.
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