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Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods
Type:
Journal
Info:
Korean J. Mater. Res. Vol. 27, No. 6 (2017)
Date:
2017-04-11
Author Information
| Name | Institution |
|---|---|
| Dae-Gyu Yang | Chungnam National University |
| Yang-Soo Kim | Chungnam National University |
| Jong-Heon Kim | Chungnam National University |
| Hyoung-Do Kim | Chungnam National University |
| Hyun-Suk Kim | Chungnam National University |
Films
Plasma Al2O3
Thermal Al2O3
Film/Plasma Properties
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Optical Properties
Analysis: UV-VIS Spectroscopy
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Extinction Coefficient
Analysis: Ellipsometry
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Dissipation Factors
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Substrates
| Si(100) |
Notes
| Paper written in Korean with extra English version of abstract and English figure descriptions and labels. |
| 1117 |