Publication Information

Title: Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods

Type: Journal

Info: Korean J. Mater. Res. Vol. 27, No. 6 (2017)

Date: 2017-04-11

DOI: https://doi.org/10.3740/MRSK.2017.27.6.295

Author Information

Name

Institution

Chungnam National University

Chungnam National University

Chungnam National University

Chungnam National University

Chungnam National University

Films

Plasma Al2O3 using Custom ECR

Deposition Temperature = 280C

75-24-1

7782-44-7

Thermal Al2O3 using Custom ECR

Deposition Temperature = 280C

75-24-1

7732-18-5

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

-

Compositional Depth Profiling

XPS, X-ray Photoelectron Spectroscopy

-

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

-

Thickness

TEM, Transmission Electron Microscope

-

Optical Properties

UV-VIS Spectroscopy

-

Refractive Index

Ellipsometry

-

Extinction Coefficient

Ellipsometry

-

Capacitance

C-V, Capacitance-Voltage Measurements

-

Dissipation Factors

C-V, Capacitance-Voltage Measurements

-

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

-

Leakage Current

I-V, Current-Voltage Measurements

-

Substrates

Si(100)

Keywords

Plasma vs Thermal Comparison

Notes

Paper written in Korean with extra English version of abstract and English figure descriptions and labels.

1117



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