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An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

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N-doped TiO2 nanotubes coated with a thin TaOxNy layer for photoelectrochemical water splitting: dual bulk and surface modification of photoanodes

Type:
Journal
Info:
Energy Environ. Sci., 2015, 8, 247-257
Date:
2014-09-12
DOI:
http://dx.doi.org/10.1039/c4ee02169j

Author Information

Name Institution
Hyoung-il KimPohang University of Science and Technology (POSTECH)

Films

Plasma Al2O3

Hardware used: Quros Plus 200
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 100C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Sopra GES-5E

Substrates

Silicon
TNTs, TiO2 NanoTubes

Notes

PEALD Al2O3 for photoelectrochemical water splitting application.
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