Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures

Type:
Journal
Info:
Japanese Journal of Applied Physics 52, 035502 (2013)
Date:
2013-01-19
DOI:
http://dx.doi.org/10.7567/JJAP.52.035502

Author Information

Name Institution
Hagyoung ChoiHanyang University
Sanghun LeeHanyang University
Hyunsoo JungHanyang University
Seokyoon ShinHanyang University
Giyul HamHanyang University
Hyungtak SeoAjou University
Hyeongtag JeonHanyang University

Films

Plasma Al2O3

Hardware used: Custom
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 50-200C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: VG Scientific ESCALAB 220iXL

Characteristic: Water Vapor Transmission Rate (WVTR)
Analysis: Calcium Test
Diagnostic: Custom

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: -

Characteristic: Chemical Binding
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Substrates

Si(100)
PES, Poly(Ether Sulfone)

Notes

573