Improved understanding of recombination at the Si/Al2O3 interface

Type:
Conference Proceedings
Info:
Proc. 25th European Photovoltaic Solar Energy Conf.
Date:
2010-09-06

Author Information

Name Institution
Florian WernerInstitute for Solar Energy Research Hamelin (ISFH)
Boris VeithInstitute for Solar Energy Research Hamelin (ISFH)
D ZielkeInstitute for Solar Energy Research Hamelin (ISFH)
L K├╝hnemundLeibniz University Hanover
C TegenkampLeibniz University Hanover
M SeibtGeorg-August University G├Âttingen
Jan SchmidtInstitute for Solar Energy Research Hamelin (ISFH)
Rolf BrendelInstitute for Solar Energy Research Hamelin (ISFH)

Films

Plasma Al2O3


Thermal Al2O3


Film/Plasma Properties

Characteristic: Fixed Charge
Analysis: Non-contact Corona C-V

Characteristic: Interface Trap Density
Analysis: Non-contact Corona C-V

Characteristic: Lifetime
Analysis: Photoconductance

Characteristic: Surface Recombination Velocity
Analysis: Photoconductance

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Characteristic: Morphology, Roughness, Topography
Analysis: TEM, Transmission Electron Microscope

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope

Characteristic: Interfacial Layer
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Substrates

Silicon

Keywords

Plasma vs Thermal Comparison
Passivation
Solar

Notes

707