Publication Information

Title: Improved understanding of recombination at the Si/Al2O3 interface

Type: Conference Proceedings

Info: Proc. 25th European Photovoltaic Solar Energy Conf.

Date: 2010-09-06

DOI: http://www.isfh.de/institut_solarforschung/files/25eupvsec_werner.pdf

Author Information

Name

Institution

Institute for Solar Energy Research Hamelin (ISFH)

Institute for Solar Energy Research Hamelin (ISFH)

Institute for Solar Energy Research Hamelin (ISFH)

Leibniz University Hanover

Leibniz University Hanover

Georg-August University G├Âttingen

Institute for Solar Energy Research Hamelin (ISFH)

Institute for Solar Energy Research Hamelin (ISFH)

Films

Plasma Al2O3 using Unknown

Deposition Temperature Range N/A

75-24-1

7782-44-7

Thermal Al2O3 using Unknown

Deposition Temperature Range N/A

75-24-1

7732-18-5

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Fixed Charge

Non-contact Corona C-V

-

Interface Trap Density

Non-contact Corona C-V

-

Lifetime

Photoconductance

Sinton WCT-100

Surface Recombination Velocity

Photoconductance

Sinton WCT-100

Interface Trap Density

C-V, Capacitance-Voltage Measurements

-

Images

TEM, Transmission Electron Microscope

-

Morphology, Roughness, Topography

TEM, Transmission Electron Microscope

-

Interfacial Layer

TEM, Transmission Electron Microscope

-

Interfacial Layer

XPS, X-ray Photoelectron Spectroscopy

-

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

-

Substrates

Silicon

Keywords

Plasma vs Thermal Comparison

Passivation

Solar

Notes

707



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