Improved understanding of recombination at the Si/Al2O3 interface
Type:
Conference Proceedings
Info:
Proc. 25th European Photovoltaic Solar Energy Conf.
Date:
2010-09-06
Author Information
| Name | Institution |
|---|---|
| Florian Werner | Institute for Solar Energy Research Hamelin (ISFH) |
| Boris Veith | Institute for Solar Energy Research Hamelin (ISFH) |
| D Zielke | Institute for Solar Energy Research Hamelin (ISFH) |
| L Kühnemund | Leibniz University Hanover |
| C Tegenkamp | Leibniz University Hanover |
| M Seibt | Georg-August University Göttingen |
| Jan Schmidt | Institute for Solar Energy Research Hamelin (ISFH) |
| Rolf Brendel | Institute for Solar Energy Research Hamelin (ISFH) |
Films
Film/Plasma Properties
Characteristic: Fixed Charge
Analysis: Non-contact Corona C-V
Characteristic: Interface Trap Density
Analysis: Non-contact Corona C-V
Characteristic: Lifetime
Analysis: Photoconductance
Characteristic: Surface Recombination Velocity
Analysis: Photoconductance
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Morphology, Roughness, Topography
Analysis: TEM, Transmission Electron Microscope
Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Characteristic: Interfacial Layer
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Substrates
| Silicon |
Notes
| 707 |