Publication Information

Title:
Light response behaviors of amorphous In-Ga-Zn-O thin-film transistors via in situ interfacial hydrogen doping modulation
Type:
Journal
Info:
RSC Adv., 2020, 10, 3572-3578
Date:
2020-01-12

Author Information

Name Institution
Xiao-Lin WangFudan University
Yan ShaoFudan University
Xiaohan WuFudan University
Mei-Na ZhangFudan University
Lingkai LiFudan University
Wen-Jun LiuFudan University
David Wei ZhangFudan University
Shi-Jin DingFudan University

Films

Plasma Al2O3


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Compositional Depth Profiling
Analysis: SIMS, Secondary Ion Mass Spectrometry

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Photoresponse
Analysis: Photocurrent Measurements

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization

Substrates

Silicon
ITO

Keywords

Flexible Circuits
Photodetectors

Notes

1454