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Light response behaviors of amorphous In-Ga-Zn-O thin-film transistors via in situ interfacial hydrogen doping modulation
Type:
Journal
Info:
RSC Adv., 2020, 10, 3572-3578
Date:
2020-01-12
Author Information
| Name | Institution |
|---|---|
| Xiao-Lin Wang | Fudan University |
| Yan Shao | Fudan University |
| Xiaohan Wu | Fudan University |
| Mei-Na Zhang | Fudan University |
| Lingkai Li | Fudan University |
| Wen-Jun Liu | Fudan University |
| David Wei Zhang | Fudan University |
| Shi-Jin Ding | Fudan University |
Films
Plasma Al2O3
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Compositional Depth Profiling
Analysis: SIMS, Secondary Ion Mass Spectrometry
Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Photoresponse
Analysis: Photocurrent Measurements
Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Substrates
| Silicon |
| ITO |
Notes
| 1454 |