Enhancement of mobility in ultra-thin-body GeOI p-channel metal-oxide-semiconductor field effect transistors with Si-passivated back interfaces

Type:
Journal
Info:
2016 Appl. Phys. Express 9 091302
Date:
2016-07-25
DOI:
https://doi.org/10.7567/APEX.9.091302

Author Information

Name Institution
Wen-Hsin ChangNational Institute of Advanced Industrial Science and Technology
Toshifumi IrisawaNational Institute of Advanced Industrial Science and Technology
Hiroyuki IshiiNational Institute of Advanced Industrial Science and Technology
Hiroyuki HattoriNational Institute of Advanced Industrial Science and Technology
Hideki TakagiNational Institute of Advanced Industrial Science and Technology
Yuichi KurashimaNational Institute of Advanced Industrial Science and Technology
Tatsuro MaedaNational Institute of Advanced Industrial Science and Technology

Films

Plasma Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Film/Plasma Properties

Substrates

Ge

Notes

937