Publication Information

Title: Enhancement of mobility in ultra-thin-body GeOI p-channel metal-oxide-semiconductor field effect transistors with Si-passivated back interfaces

Type: Journal

Info: 2016 Appl. Phys. Express 9 091302

Date: 2016-07-25

DOI: https://doi.org/10.7567/APEX.9.091302

Author Information

Name

Institution

National Institute of Advanced Industrial Science and Technology

National Institute of Advanced Industrial Science and Technology

National Institute of Advanced Industrial Science and Technology

National Institute of Advanced Industrial Science and Technology

National Institute of Advanced Industrial Science and Technology

National Institute of Advanced Industrial Science and Technology

National Institute of Advanced Industrial Science and Technology

Films

Plasma Al2O3 using Unknown

Deposition Temperature = 200C

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Ge

Keywords

Notes

937



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