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An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

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DFT modeling of plasma-assisted atomic layer deposition for Si(110) passivation: formation of boehmite-like chains as γ-Al2O3 precursors

Type:
Journal
Info:
Theor Chem Acc (2016) 135:152
Date:
2016-04-25
DOI:
http://dx.doi.org/10.1007/s00214-016-1900-2

Author Information

Name Institution
Andrey A. RybakovMoscow State University
Alexander V. LarinMoscow State University
Daniel P. VercauterenUniversity of Namur
Georgy M. ZhidomirovMoscow State University

Films

Plasma Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

Notes

790