Electrical characterization and reliability analysis of Al2O3/AlGaN/GaN MISH structure

Type:
Conference Proceedings
Info:
2014 IEEE International Reliability Physics Symposium, CD.6.1 - CD.6.5
Date:
2014-06-01
DOI:
http://dx.doi.org/10.1109/IRPS.2014.6861129

Author Information

Name Institution
Jiechen WuUniversity of California - Los Angeles (UCLA)

Films

Plasma Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Unknown
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Unknown
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Substrates

Notes

249