Publication Information

Title:
Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs
Type:
Journal
Info:
IEEE ELECTRON DEVICE LETTERS, VOL. 36, NO. 3, PP. 235-237, 2015
Date:
2015-01-07

Author Information

Name Institution
A. MalmrosChalmers University of Technology
P. GamarraIII-V Lab
M.-A. Di Forte-PoissonIII-V Lab
Jaan AarikChalmers University of Technology
C. LacamIII-V Lab
Jaan AarikChalmers University of Technology
M. TordjmanIII-V Lab
R. AubryIII-V Lab
N. RorsmanChalmers University of Technology

Films

Thermal Al2O3


Plasma Al2O3


Film/Plasma Properties

Characteristic: Thickness
Analysis: -

Characteristic: Refractive Index
Analysis: -

Substrates

Keywords

Passivation

Notes

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