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Improvement of interfacial and electrical properties of Al2O3/n-Ga0.47In0.53As for III-V impact ionization MOSFETs

Type:
Journal
Info:
Journal of Physics: Conference Series 647 (2015) 012062
Date:
2015-06-29
DOI:
http://dx.doi.org/10.1088/1742-6596/647/1/012062

Author Information

Name Institution
Y LechauxUniversité Lille
A FadjieUniversité Lille
Sylvain BollaertUniversité Lille
V TalboSalamanca University
J MateosSalamanca University
T GonzálezSalamanca University
B G VasalloSalamanca University
Nicolas WichmannUniversité Lille

Films

Thermal Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Where to buy precursor
Deposition Temperature = 250C

Other Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Substrates

InGaAs

Notes

375