Publication Information

Title:
Improvement of interfacial and electrical properties of Al2O3/n-Ga0.47In0.53As for III-V impact ionization MOSFETs
Type:
Journal
Info:
Journal of Physics: Conference Series 647 (2015) 012062
Date:
2015-06-29

Author Information

Name Institution
Y LechauxUniversité Lille 1
A FadjieUniversité Lille 1
Sylvain BollaertUniversité Lille 1
V TalboSalamanca University
J MateosSalamanca University
T GonzálezSalamanca University
B G VasalloSalamanca University
Nicolas WichmannUniversité Lille 1

Films

Thermal Al2O3


Other Al2O3

Hardware used: Unknown


CAS#: 7732-18-5

CAS#: 7782-44-7

Film/Plasma Properties

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

InGaAs

Keywords

Notes

375