Publication Information

Title: Improvement of interfacial and electrical properties of Al2O3/n-Ga0.47In0.53As for III-V impact ionization MOSFETs

Type: Journal

Info: Journal of Physics: Conference Series 647 (2015) 012062

Date: 2015-06-29

DOI: http://dx.doi.org/10.1088/1742-6596/647/1/012062

Author Information

Name

Institution

Université Lille 1

Université Lille 1

Université Lille 1

Salamanca University

Salamanca University

Salamanca University

Salamanca University

Université Lille 1

Films

Thermal Al2O3 using Unknown

Deposition Temperature = 250C

75-24-1

7732-18-5

Other Al2O3 using Unknown

Deposition Temperature = 250C

75-24-1

7732-18-5

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Images

TEM, Transmission Electron Microscope

Unknown

Capacitance

C-V, Capacitance-Voltage Measurements

Unknown

Interface Trap Density

C-V, Capacitance-Voltage Measurements

Unknown

Substrates

InGaAs

Keywords

Notes

375



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