Publication Information

Title: Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment

Type: Journal

Info: Journal of Vacuum Science & Technology B 33, 04E102 (2015)

Date: 2015-04-03

DOI: http://dx.doi.org/10.1116/1.4917548

Author Information

Name

Institution

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

Films

Plasma Al2O3 using Beneq TFS-200

Deposition Temperature = 150C

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Leakage Current

I-V, Current-Voltage Measurements

Unknown

Interface Trap Density

C-V, Capacitance-Voltage Measurements

Unknown

Compositional Depth Profiling

XPS, X-ray Photoelectron Spectroscopy

Unknown

Substrates

Keywords

Notes

346



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