Publication Information

Title: Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment

Type: Journal

Info: Journal of Vacuum Science & Technology B 33, 04E102 (2015)

Date: 2015-04-03

DOI: http://dx.doi.org/10.1116/1.4917548

Author Information

Name

Institution

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

Films

Plasma Al2O3 using Beneq TFS-200

Deposition Temperature = 150C

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Leakage Current

I-V, Current-Voltage Measurements

-

Interface Trap Density

C-V, Capacitance-Voltage Measurements

-

Compositional Depth Profiling

XPS, X-ray Photoelectron Spectroscopy

-

Substrates

GaSb

Keywords

Notes

346



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