Publication Information

Title:
Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment
Type:
Journal
Info:
Journal of Vacuum Science & Technology B 33, 04E102 (2015)
Date:
2015-04-03

Author Information

Name Institution
Laura B. RuppaltU.S. Naval Research Laboratory
Erin ClevelandU.S. Naval Research Laboratory
James G. ChamplainU.S. Naval Research Laboratory
Brian R. BennettU.S. Naval Research Laboratory
J. Brad BoosU.S. Naval Research Laboratory
Sharka M. ProkesU.S. Naval Research Laboratory

Films

Plasma Al2O3


Film/Plasma Properties

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy

Substrates

GaSb

Keywords

Notes

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