Kinetics of the permanent deactivation of the boron-oxygen complex in crystalline silicon as a function of illumination intensity

Type:
Journal
Info:
AIP ADVANCES 7, 035305 (2017)
Date:
2017-02-23
DOI:
http://dx.doi.org/10.1063/1.4978266

Author Information

Name Institution
Verena SteckenreiterInstitute for Solar Energy Research Hamelin (ISFH)
Dominic C. WalterInstitute for Solar Energy Research Hamelin (ISFH)
Jan SchmidtInstitute for Solar Energy Research Hamelin (ISFH)

Films

Plasma Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

Silicon

Notes

996