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Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition
Ni80Fe20 nanotubes with optimized spintronic functionalities prepared by atomic layer deposition
On the Contact Optimization of ALD-Based MoS2 FETs: Correlation of Processing Conditions and Interface Chemistry with Device Electrical Performance
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Experimental verification of electro-refractive phase modulation in graphene
Type:
Journal
Info:
Scientific Reports 5, Article number: 10967 (2015)
Date:
2015-05-12
Author Information
| Name | Institution |
|---|---|
| Muhammad Mohsin | Applied Micro and Optoelectronic (AMO) GmbH |
| Daniel Neumaier | Applied Micro and Optoelectronic (AMO) GmbH |
| Daniel Schall | Applied Micro and Optoelectronic (AMO) GmbH |
| Martin Otto | Applied Micro and Optoelectronic (AMO) GmbH |
| Christopher Matheisen | Applied Micro and Optoelectronic (AMO) GmbH |
| Anna Lena Giesecke | Applied Micro and Optoelectronic (AMO) GmbH |
| Abhay A. Sagade | Applied Micro and Optoelectronic (AMO) GmbH |
| Heinrich Kurz | Applied Micro and Optoelectronic (AMO) GmbH |
Films
Film/Plasma Properties
Substrates
| HSQ, Hydrogen SilsesQuioxane |
Keywords
Notes
| Plasma and thermal ALD Al2O3 films used in graphene-based electro-refractive phase modulation device. |
| 330 |