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Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
Innovative remote plasma source for atomic layer deposition for GaN devices
Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
Optical in situ monitoring of plasma-enhanced atomic layer deposition process
The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
Experimental verification of electro-refractive phase modulation in graphene
Type:
Journal
Info:
Scientific Reports 5, Article number: 10967 (2015)
Date:
2015-05-12
Author Information
| Name | Institution |
|---|---|
| Muhammad Mohsin | Applied Micro and Optoelectronic (AMO) GmbH |
| Daniel Neumaier | Applied Micro and Optoelectronic (AMO) GmbH |
| Daniel Schall | Applied Micro and Optoelectronic (AMO) GmbH |
| Martin Otto | Applied Micro and Optoelectronic (AMO) GmbH |
| Christopher Matheisen | Applied Micro and Optoelectronic (AMO) GmbH |
| Anna Lena Giesecke | Applied Micro and Optoelectronic (AMO) GmbH |
| Abhay A. Sagade | Applied Micro and Optoelectronic (AMO) GmbH |
| Heinrich Kurz | Applied Micro and Optoelectronic (AMO) GmbH |
Films
Film/Plasma Properties
Substrates
| HSQ, Hydrogen SilsesQuioxane |
Keywords
Notes
| Plasma and thermal ALD Al2O3 films used in graphene-based electro-refractive phase modulation device. |
| 330 |