Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer
Type:
Journal
Info:
Japanese Journal of Applied Physics 55, 1202B9 (2016)
Date:
2016-08-23
Author Information
| Name | Institution |
|---|---|
| Man Hoi Wong | National Institute of Information and Communications Technology |
| K. Sasaki | Tamura Corporation |
| A. Kuramata | Tamura Corporation |
| S. Yamakoshi | Tamura Corporation |
| M. Higashiwaki | National Institute of Information and Communications Technology |
Films
Film/Plasma Properties
Substrates
| Ga2O3 |
Notes
| 892 |