Publication Information

Title:
Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer
Type:
Journal
Info:
Japanese Journal of Applied Physics 55, 1202B9 (2016)
Date:
2016-08-23

Author Information

Name Institution
Man Hoi WongNational Institute of Information and Communications Technology
K. SasakiTamura Corporation
A. KuramataTamura Corporation
S. YamakoshiTamura Corporation
M. HigashiwakiNational Institute of Information and Communications Technology

Films

Plasma Al2O3


Film/Plasma Properties

Substrates

Ga2O3

Keywords

Notes

892