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Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer

Type:
Journal
Info:
Japanese Journal of Applied Physics 55, 1202B9 (2016)
Date:
2016-08-23
DOI:
http://doi.org/10.7567/JJAP.55.1202B9

Author Information

Name Institution
Man Hoi WongNational Institute of Information and Communications Technology
K. SasakiTamura Corporation
A. KuramataTamura Corporation
S. YamakoshiTamura Corporation
M. HigashiwakiNational Institute of Information and Communications Technology

Films

Plasma Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Substrates

Ga2O3

Notes

892