Publication Information

Title: MANOS performance dependence on ALD Al2O3 oxidation source

Type: Journal

Info: Microelectronic Engineering 159 (2016) 127 - 131

Date: 2016-03-07

DOI: http://dx.doi.org/10.1016/j.mee.2016.03.021

Author Information

Name

Institution

NCSR "Demokritos"

NCSR "Demokritos"

NCSR "Demokritos"

NCSR "Demokritos"

University of Helsinki

University of Helsinki

University of Helsinki

University of Helsinki

University of Helsinki

NCSR "Demokritos"

Films

Deposition Temperature = 250C

75-24-1

7732-18-5

Plasma Al2O3 using Beneq TFS-200

Deposition Temperature = 250C

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

-

Capacitance

C-V, Capacitance-Voltage Measurements

HP 4284A LCR

EOT, Equivalent Oxide Thickness

C-V, Capacitance-Voltage Measurements

HP 4284A LCR

Flat Band Voltage Shift

C-V, Capacitance-Voltage Measurements

HP 4284A LCR

Electrical Properties

I-V, Current-Voltage Measurements

Agilent 4155B Semiconductor Parameter Analyzer

Leakage Current

I-V, Current-Voltage Measurements

Agilent 4155B Semiconductor Parameter Analyzer

Substrates

Si3N4

Keywords

Capacitors

Notes

807



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