Publication Information

Title:
MANOS performance dependence on ALD Al2O3 oxidation source
Type:
Journal
Info:
Microelectronic Engineering 159 (2016) 127 - 131
Date:
2016-03-07

Author Information

Name Institution
Nikolaos NikolaouNCSR "Demokritos"
Panagiotis DimitrakisNCSR "Demokritos"
Pascal NormandNCSR "Demokritos"
Thanassis SpeliotisNCSR "Demokritos"
Kaupo KukliUniversity of Helsinki
Jaakko T. NiinistöUniversity of Helsinki
Kenichiro MizohataUniversity of Helsinki
Mikko K. RitalaUniversity of Helsinki
Markku A. LeskeläUniversity of Helsinki
Vassilios Ioannou-SougleridisNCSR "Demokritos"

Films

Thermal Al2O3


Plasma Al2O3


Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Electrical Properties
Analysis: I-V, Current-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Substrates

Si3N4

Keywords

Capacitors

Notes

807