MANOS performance dependence on ALD Al2O3 oxidation source
Type:
Journal
Info:
Microelectronic Engineering 159 (2016) 127 - 131
Date:
2016-03-07
Author Information
| Name | Institution |
|---|---|
| Nikolaos Nikolaou | NCSR "Demokritos" |
| Panagiotis Dimitrakis | NCSR "Demokritos" |
| Pascal Normand | NCSR "Demokritos" |
| Thanassis Speliotis | NCSR "Demokritos" |
| Kaupo Kukli | University of Helsinki |
| Jaakko T. Niinistö | University of Helsinki |
| Kenichiro Mizohata | University of Helsinki |
| Mikko K. Ritala | University of Helsinki |
| Markku A. Leskelä | University of Helsinki |
| Vassilios Ioannou-Sougleridis | NCSR "Demokritos" |
Films
Thermal Al2O3
Plasma Al2O3
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Electrical Properties
Analysis: I-V, Current-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Substrates
| Si3N4 |
Notes
| 807 |