Investigation of field-effect passivation and interface state parameters at the Al2O3/Si interface

Type:
Journal
Info:
27th European Photovoltaic Solar Energy Conference and Exhibition
Date:
2012-09-24

Author Information

Name Institution
Wensheng LiangThe Australian National University
Klaus J. WeberThe Australian National University
Dongchul SuhThe Australian National University
Yongling RenThe Australian National University

Films

Plasma Al2O3


Film/Plasma Properties

Characteristic: Surface Recombination Velocity
Analysis: Corona Charge

Characteristic: Lifetime
Analysis: Lifetime Testing

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

Si(100)

Notes

1369