Publication Information

Title:
Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique
Type:
Conference Proceedings
Info:
ECS Transactions, 33 (6) 227-233 (2010)
Date:
2010-10-01

Author Information

Name Institution
Hiroki IshizakiTokyo University of Science
Masataka IidaTokyo University of Science
Yohei OtaniTokyo University of Science
Yukio FukudaTokyo University of Science
Tetsuya SatoUniversity of Yamanashi
Toshiyuki TakamatsuUniversity of Yamanashi
Toshiro OnoHirosaki University

Films

Plasma Al2O3


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

Si(100)

Keywords

Notes

1207