Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique

Type:
Conference Proceedings
Info:
ECS Transactions, 33 (6) 227-233 (2010)
Date:
2010-10-01
DOI:
http://dx.doi.org/10.1149/1.3487553

Author Information

Name Institution
Hiroki IshizakiTokyo University of Science
Masataka IidaTokyo University of Science
Yohei OtaniTokyo University of Science
Yukio FukudaTokyo University of Science
Tetsuya SatoUniversity of Yamanashi
Toshiyuki TakamatsuUniversity of Yamanashi
Toshiro OnoHirosaki University

Films

Plasma Al2O3

Hardware used: Custom Microwave Plasma
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Substrates

Si(100)

Notes

1207