Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors
Type:
Journal
Info:
Applied Physics Letters 108, 182104 (2016)
Date:
2016-04-26
Author Information
| Name | Institution |
|---|---|
| Eungtaek Kim | Korea Advanced Institute of Science and Technology |
| Choong-Ki Kim | Korea Advanced Institute of Science and Technology |
| Myung Keun Lee | Korea Advanced Institute of Science and Technology |
| Tewook Bang | Korea Advanced Institute of Science and Technology |
| Yang-Kyu Choi | Korea Advanced Institute of Science and Technology |
| Sang-Hee Ko Park | Korea Advanced Institute of Science and Technology |
| Kyung Cheol Choi | Korea Advanced Institute of Science and Technology |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Substrates
| IGZO |
Notes
| 868 |