Publication Information

Title:
Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors
Type:
Journal
Info:
Applied Physics Letters 108, 182104 (2016)
Date:
2016-04-26

Author Information

Name Institution
Eungtaek KimKorea Advanced Institute of Science and Technology
Choong-Ki KimKorea Advanced Institute of Science and Technology
Myung Keun LeeKorea Advanced Institute of Science and Technology
Tewook BangKorea Advanced Institute of Science and Technology
Yang-Kyu ChoiKorea Advanced Institute of Science and Technology
Sang-Hee Ko ParkKorea Advanced Institute of Science and Technology
Kyung Cheol ChoiKorea Advanced Institute of Science and Technology

Films

Thermal Al2O3


Plasma Al2O3


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization

Substrates

IGZO

Keywords

Notes

868