Publication Information

Title:
Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
Type:
Journal
Info:
Journal of the Korean Physical Society, Vol. 54, No. 2, February 2009, pp. 707~711
Date:
2008-11-10

Author Information

Name Institution
Hyeong-Seon YunCheongju University
Kwang-Ho KimCheongju University

Films

Plasma Al2O3


Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

GaN

Keywords

Gate Dielectric

Notes

184