Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric

Type:
Journal
Info:
Journal of the Korean Physical Society, Vol. 54, No. 2, February 2009, pp. 707~711
Date:
2008-11-10
DOI:
http://dx.crossref.org/10.3938/jkps.54.707

Author Information

Name Institution
Hyeong-Seon YunCheongju University
Kwang-Ho KimCheongju University

Films

Plasma Al2O3

Hardware used: Custom
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 25-500C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Rudolf AutoEL II

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: HP 4140

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4284A LCR

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4284A LCR

Substrates

GaN

Notes

184