Publication Information

Title: Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric

Type: Journal

Info: Journal of the Korean Physical Society, Vol. 54, No. 2, February 2009, pp. 707~711

Date: 2008-11-10

DOI: http://dx.crossref.org/10.3938/jkps.54.707

Author Information

Name

Institution

Cheongju University

Cheongju University

Films

Plasma Al2O3 using Custom

Deposition Temperature Range = 25-500C

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Unknown

Thickness

Ellipsometry

Rudolf AutoEL II

Leakage Current

I-V, Current-Voltage Measurements

HP 4140

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

HP 4284A LCR

Interface Trap Density

C-V, Capacitance-Voltage Measurements

HP 4284A LCR

Substrates

GaN

Keywords

Gate Dielectric

Notes

184



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