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Innovative remote plasma source for atomic layer deposition for GaN devices

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 39, 062403 (2021)
Date:
2021-08-27
DOI:
http://dx.doi.org/10.1116/6.0001318

Author Information

Name Institution
Harm C. M. KnoopsOxford Instruments
Karsten ArtsEindhoven University of Technology
Jan W. BuiterEindhoven University of Technology
Luca Matteo MartiniEindhoven University of Technology
R. EngelnEindhoven University of Technology
Dilini Tania HemakumaraOxford Instruments
Michael PowellOxford Instruments
Erwin (W.M.M.) KesselsEindhoven University of Technology
Chris HodsonOxford Instruments
Aileen O'MahonyOxford Instruments

Films

Plasma Al2O3

Hardware used: Oxford Instruments Atomfab
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam alpha-SE

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam alpha-SE

Characteristic: Uniformity
Analysis: Ellipsometry
Diagnostic: J.A. Woollam alpha-SE

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Dispersion
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy
Diagnostic: Custom

Characteristic: Ion Energy
Analysis: RFEA, Retarding Field Energy Analyzer
Diagnostic: Impedans Semion

Characteristic: Ion Flux
Analysis: RFEA, Retarding Field Energy Analyzer
Diagnostic: Impedans Semion

Substrates

GaN
Silicon

Notes

1654