Innovative remote plasma source for atomic layer deposition for GaN devices

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 39, 062403 (2021)
Date:
2021-08-27

Author Information

Name Institution
Harm C. M. KnoopsOxford Instruments
Karsten ArtsEindhoven University of Technology
Jan W. BuiterEindhoven University of Technology
Luca Matteo MartiniEindhoven University of Technology
R. EngelnEindhoven University of Technology
Dilini Tania HemakumaraOxford Instruments
Michael PowellOxford Instruments
Erwin (W.M.M.) KesselsEindhoven University of Technology
Chris HodsonOxford Instruments
Aileen O'MahonyOxford Instruments

Films


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Uniformity
Analysis: Ellipsometry

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Dispersion
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy

Characteristic: Ion Energy
Analysis: RFEA, Retarding Field Energy Analyzer

Characteristic: Ion Flux
Analysis: RFEA, Retarding Field Energy Analyzer

Substrates

GaN
Silicon

Keywords

Notes

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