Innovative remote plasma source for atomic layer deposition for GaN devices
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 39, 062403 (2021)
Date:
2021-08-27
Author Information
| Name | Institution |
|---|---|
| Harm C. M. Knoops | Oxford Instruments |
| Karsten Arts | Eindhoven University of Technology |
| Jan W. Buiter | Eindhoven University of Technology |
| Luca Matteo Martini | Eindhoven University of Technology |
| R. Engeln | Eindhoven University of Technology |
| Dilini Tania Hemakumara | Oxford Instruments |
| Michael Powell | Oxford Instruments |
| Erwin (W.M.M.) Kessels | Eindhoven University of Technology |
| Chris Hodson | Oxford Instruments |
| Aileen O'Mahony | Oxford Instruments |
Films
Plasma Al2O3
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Uniformity
Analysis: Ellipsometry
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Dispersion
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy
Characteristic: Ion Energy
Analysis: RFEA, Retarding Field Energy Analyzer
Characteristic: Ion Flux
Analysis: RFEA, Retarding Field Energy Analyzer
Substrates
| GaN |
| Silicon |
Notes
| 1654 |