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Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application
Plasma enhanced atomic layer deposition of thin film Li1+xMn2-xO4 for realization of all solid-state 3D lithium-ion microbatteries
AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms
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Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon
Type:
Journal
Info:
Journal of Applied Physics 121, 185702 (2017)
Date:
2017-04-23
Author Information
| Name | Institution |
|---|---|
| Tim Niewelt | Fraunhofer Institute for Solar Energy Systems (ISE) |
| Marisa Selinger | Fraunhofer Institute for Solar Energy Systems (ISE) |
| N. E. Grant | University of Warwick |
| Wolfram Kwapil | Fraunhofer Institute for Solar Energy Systems (ISE) |
| J. D. Murphy | University of Warwick |
| Martin C. Schubert | Fraunhofer Institute for Solar Energy Systems (ISE) |
Films
Film/Plasma Properties
Substrates
| Silicon |
Keywords
| Solar |
| Passivation |
Notes
| 1029 |
Popular Precursors
Top Authors
| Erwin (W.M.M.) Kessels |
| Hyeongtag Jeon |
| Hyungjun Kim |
| Mauritius C. M. (Richard) van de Sanden |
| Christophe Detavernier |