Publication Information

Title:
Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor
Type:
Conference Proceedings
Info:
ECS Trans. 2014 volume 61, issue 4, 345-351
Date:
2014-05-11

Author Information

Name Institution
Kazunori KurishimaMeiji University

Films

Plasma Al2O3


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Threshold Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Mobility
Analysis: -

Substrates

Keywords

TFT, Thin Film Transistor
Gate Dielectric

Notes

PEALD Al2O3 for IGZO TFT gate dielectric.
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