Publication Information

Title: Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor

Type: Conference Proceedings

Info: ECS Trans. 2014 volume 61, issue 4, 345-351

Date: 2014-05-11

DOI: http://dx.doi.org/10.1149/06104.0345ecst

Author Information

Name

Institution

Meiji University

Films

Plasma Al2O3 using Unknown

Deposition Temperature = 300C

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

Unknown

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

Agilent B1500A Semiconductor Device Analyzer

Flat Band Voltage

C-V, Capacitance-Voltage Measurements

Agilent B1500A Semiconductor Device Analyzer

EOT, Equivalent Oxide Thickness

C-V, Capacitance-Voltage Measurements

Agilent B1500A Semiconductor Device Analyzer

Threshold Voltage

C-V, Capacitance-Voltage Measurements

Agilent B1500A Semiconductor Device Analyzer

Mobility

Unknown

Unknown

Substrates

Keywords

TFT, Thin Film Transistor

Gate Dielectric

Notes

PEALD Al2O3 for IGZO TFT gate dielectric.

262



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