Introducing Plasma ALD, LLC's first in-house product.

An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

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Control of ion-flux and ion-energy in direct inductively coupled plasma reactor for interfacial-mixing plasma-enhanced atomic layer deposition

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 38, 032408 (2020)
Date:
2020-03-13
DOI:
http://dx.doi.org/10.1116/6.0000021

Author Information

Name Institution
Masaki HirayamaTohoku University
Akinobu TeramotoTohoku University
Shigetoshi SugawaTohoku University

Films

Plasma Al2O3

Hardware used: Custom Direct Inductively Coupled Plasma
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 150C

Film/Plasma Properties

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Themis

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Themis

Characteristic: Morphology, Roughness, Topography
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Themis

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: Hitachi SU9000

Characteristic: Ion Energy
Analysis: Langmuir Probe
Diagnostic: Custom

Characteristic: Ion Flux
Analysis: Langmuir Probe
Diagnostic: Custom

Characteristic: Electron Density, ne
Analysis: Langmuir Probe
Diagnostic: Custom

Characteristic: Electron Temperature, Te
Analysis: Langmuir Probe
Diagnostic: Custom

Characteristic: Ion Energy
Analysis: Planar Probe
Diagnostic: Custom

Characteristic: Ion Flux
Analysis: Planar Probe
Diagnostic: Custom

Substrates

Si(100)
SiO2

Notes

1489