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Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
Innovative remote plasma source for atomic layer deposition for GaN devices
Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
Optical in situ monitoring of plasma-enhanced atomic layer deposition process
The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
Atomic Layer Deposition of Aluminum Phosphate Based on the Plasma Polymerization of Trimethyl Phosphate
Type:
Journal
Info:
Chem. Mater., 2014, 26 (23), pp 6863-6871
Date:
2014-11-14
Author Information
| Name | Institution |
|---|---|
| Thomas Dobbelaere | Ghent University |
Films
Plasma AlPxOy
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: OES
Analysis: OES, Optical Emission Spectroscopy
Characteristic: Gas Phase Species
Analysis: QMS, Quadrupole Mass Spectrometer
Characteristic: Gas Phase Species
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Substrates
| Silicon |
Keywords
| Plasma-Enhanced Atomic Layer Deposition |
Notes
| Available as chapter 3 in on-line thesis: Plasma-enhanced atomic layer deposition of transition metal phosphates |
| 240 |