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Infrared single-photon sensitivity in atomic layer deposited superconducting nanowires
Effects of deposition temperature on the wear behavior and material properties of plasma enhanced atomic layer deposition (PEALD) titanium vanadium nitride thin films
Gallium nitride thin films by microwave plasma-assisted ALD
Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition
Hydrogen-induced abstraction mechanism of surface methyl groups in atomic-layer-epitaxy of germanium
Atomic Layer Deposition of Aluminum Phosphate Based on the Plasma Polymerization of Trimethyl Phosphate
Type:
Journal
Info:
Chem. Mater., 2014, 26 (23), pp 6863-6871
Date:
2014-11-14
Author Information
| Name | Institution |
|---|---|
| Thomas Dobbelaere | Ghent University |
Films
Plasma AlPxOy
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: OES
Analysis: OES, Optical Emission Spectroscopy
Characteristic: Gas Phase Species
Analysis: QMS, Quadrupole Mass Spectrometer
Characteristic: Gas Phase Species
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Substrates
| Silicon |
Notes
| Available as chapter 3 in on-line thesis: Plasma-enhanced atomic layer deposition of transition metal phosphates |
| 240 |