Atomic Layer Deposition of Aluminum Phosphate Based on the Plasma Polymerization of Trimethyl Phosphate

Type:
Journal
Info:
Chem. Mater., 2014, 26 (23), pp 6863-6871
Date:
2014-11-14
DOI:
http://dx.doi.org/10.1021/cm503587w

Author Information

Name Institution
Thomas DobbelaereGhent University

Films

Plasma AlPxOy

Hardware used: Custom Remote Inductively Coupled Plasma
TMA, trimethyl aluminum, AlMe3
CAS#: 75-24-1
Where to buy precursor
Trimethyl phosphate, TMP, (MeO)3PO
CAS#: 512-56-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 50-320C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: OES
Analysis: OES, Optical Emission Spectroscopy
Diagnostic: -

Characteristic: Gas Phase Species
Analysis: QMS, Quadrupole Mass Spectrometer
Diagnostic: -

Characteristic: Gas Phase Species
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: -

Substrates

Silicon

Keywords

Plasma-Enhanced Atomic Layer Deposition

Notes

Available as chapter 3 in on-line thesis: Plasma-enhanced atomic layer deposition of transition metal phosphates
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