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Normally-off AlGaN/GaN recessed MOS-HEMTs on normally-on epitaxial structures for microwave power applications
Type:
Conference Proceedings
Info:
2016 11th European Microwave Integrated Circuits Conference (EuMIC)
Date:
2016-10-03
Author Information
| Name | Institution |
|---|---|
| L. Trinh Xuan | III-V Lab |
| R. Aubry | III-V Lab |
| N. Michel | III-V Lab |
| O. Patard | III-V Lab |
| J.-C. Jacquet | III-V Lab |
| S. Piotrowicz | III-V Lab |
| M. Oualli | III-V Lab |
| P. Gamarra | III-V Lab |
| C. Potier | III-V Lab |
| D. Lancereau | III-V Lab |
| S. L. Delage | III-V Lab |
| S. Laurent | University of Limoges |
| P. Bouysse | University of Limoges |
| R. Quéré | University of Limoges |
Films
Film/Plasma Properties
Substrates
Notes
| 954 |