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Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition
Hydrogen-induced abstraction mechanism of surface methyl groups in atomic-layer-epitaxy of germanium
Hydrogen-plasma-assisted hybrid atomic layer deposition of Ir thin film as novel Cu diffusion barrier
Self-limiting diamond growth from alternating CFx and H fluxes
Sub-10-nm ferroelectric Gd-doped HfO2 layers
Enhancement of reliability and stability for transparent amorphous indium-zinc-tin-oxide thin film transistors
Type:
Journal
Info:
RSC Adv., 2016, 6, 106374-106379
Date:
2016-11-03
Author Information
| Name | Institution |
|---|---|
| Po-Tsun Liu | National Chiao Tung University |
| Chih-Hsiang Chang | National Chiao Tung University |
| Chur-Shyang Fuh | National Chiao Tung University |
Films
Film/Plasma Properties
Substrates
| ITO |
| IZTO |
Keywords
| Passivation |
Notes
| 936 |