Enhancement of reliability and stability for transparent amorphous indium-zinc-tin-oxide thin film transistors

Type:
Journal
Info:
RSC Adv., 2016, 6, 106374-106379
Date:
2016-11-03
DOI:
http://dx.doi.org/10.1039/C6RA22423G

Author Information

Name Institution
Po-Tsun LiuNational Chiao Tung University
Chih-Hsiang ChangNational Chiao Tung University
Chur-Shyang FuhNational Chiao Tung University

Films

Plasma Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Substrates

ITO
IZTO

Notes

936