Introducing Plasma ALD, LLC's first in-house product.

An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

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Direct Growth of Al2O3 on Black Phosphorus by Plasma-Enhanced Atomic Layer Deposition

Type:
Journal
Info:
Nanoscale Research Letters (2017) 12:282
Date:
2017-03-20
DOI:
http://dx.doi.org/10.1186/s11671-017-2016-x

Author Information

Name Institution
B. B. WuJiangnan University
H. M. ZhengFudan University
Y. Q. DingJiangnan University
Wen-Jun LiuFudan University
Hong Liang LuFudan University
Peng ZhouFudan University
Lin ChenFudan University
Qing-Qing SunFudan University
Shi-Jin DingFudan University
David Wei ZhangFudan University

Films

Plasma Al2O3

Hardware used: Picosun R200
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 150-350C

Film/Plasma Properties

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Bruker Dimension Edge

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Kratos Analytical Axis Ultra DLD

Substrates

Black Phosphorus
Phosphorus

Notes

999