Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches

Publication Information

Title: Impact of the firing step on Al₂O₃ passivation on p-type Czochralski Si wafers: Electrical and chemical approaches

Type: Journal

Info: Japanese Journal of Applied Physics 54, 08KD21 (2015)

Date: 2015-05-19

DOI: http://dx.doi.org/10.7567/JJAP.54.08KD21

Author Information

Name

Institution

Université Lille 1

Université Lille 1

Université Lille 1

Photowatt

Photowatt

Films

Plasma Al₂O₃ using Beneq TFS-200

Deposition Temperature = 200C

TMA, Trimethyl Aluminum, Trimethylalane, Trimethylaluminium, Aluminium Trimethyl, Aluminum Trimethanide, Al(CH₃)₃, AlMe₃, Al₂(CH₃)₆, Al₂Me₆

75-24-1

Where to buy precursor

Oxygen, O₂

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Interface Trap Density

C-V, Capacitance-Voltage Measurements

Unknown

Flat Band Voltage

C-V, Capacitance-Voltage Measurements

Unknown

Effective Charge Density

C-V, Capacitance-Voltage Measurements

Unknown

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Bruker Dimension ICON

Chemical Composition, Impurities

SIMS, Secondary Ion Mass Spectrometry

Unknown

Photoconductance

Sinton WCT-120 Lifetime Tester

Substrates

Silicon

Keywords

Notes

364

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Mark Sowa

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Precursors

Deposition Hardware

Authors

Film and Plasma Characteristics

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Publication Information

Author Information

Films

Plasma Al2O3 using Beneq TFS-200

Deposition Temperature = 200C

Film/Plasma Properties

Substrates

Keywords

Notes

Shortcuts

Plasma Al₂O₃ using Beneq TFS-200