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Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
Innovative remote plasma source for atomic layer deposition for GaN devices
Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
Optical in situ monitoring of plasma-enhanced atomic layer deposition process
The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches
Type:
Journal
Info:
Japanese Journal of Applied Physics 54, 08KD21 (2015)
Date:
2015-05-19
Author Information
| Name | Institution |
|---|---|
| Matthieu Pawlik | Université Lille 1 |
| Jean-Pierre Vilcot | Université Lille 1 |
| Mathieu Halbwax | Université Lille 1 |
| Michel Gauthier | Photowatt |
| Nam Le Quang | Photowatt |
Films
Plasma Al2O3
Film/Plasma Properties
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Effective Charge Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Chemical Composition, Impurities
Analysis: SIMS, Secondary Ion Mass Spectrometry
Characteristic: Photoconductance
Analysis: Photoconductance
Substrates
| Silicon |
Keywords
Notes
| 364 |