Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches
Type:
Journal
Info:
Japanese Journal of Applied Physics 54, 08KD21 (2015)
Date:
2015-05-19
Author Information
Name | Institution |
---|---|
Matthieu Pawlik | Université Lille 1 |
Jean-Pierre Vilcot | Université Lille 1 |
Mathieu Halbwax | Université Lille 1 |
Michel Gauthier | Photowatt |
Nam Le Quang | Photowatt |
Films
Plasma Al2O3
Film/Plasma Properties
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Effective Charge Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Chemical Composition, Impurities
Analysis: SIMS, Secondary Ion Mass Spectrometry
Characteristic: Photoconductance
Analysis: Photoconductance
Substrates
Silicon |
Notes
364 |