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Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
Low-temperature plasma-enhanced atomic layer deposition of 2-D MoS2: large area, thickness control and tuneable morphology
Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
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Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches
Type:
Journal
Info:
Japanese Journal of Applied Physics 54, 08KD21 (2015)
Date:
2015-05-19
Author Information
| Name | Institution |
|---|---|
| Matthieu Pawlik | Université Lille 1 |
| Jean-Pierre Vilcot | Université Lille 1 |
| Mathieu Halbwax | Université Lille 1 |
| Michel Gauthier | Photowatt |
| Nam Le Quang | Photowatt |
Films
Plasma Al2O3
Film/Plasma Properties
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Effective Charge Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Chemical Composition, Impurities
Analysis: SIMS, Secondary Ion Mass Spectrometry
Characteristic: Photoconductance
Analysis: Photoconductance
Substrates
| Silicon |
Keywords
Notes
| 364 |