Publication Information

Title:
Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches
Type:
Journal
Info:
Japanese Journal of Applied Physics 54, 08KD21 (2015)
Date:
2015-05-19

Author Information

Name Institution
Matthieu PawlikUniversité Lille 1
Jean-Pierre VilcotUniversité Lille 1
Mathieu HalbwaxUniversité Lille 1
Michel GauthierPhotowatt
Nam Le QuangPhotowatt

Films

Plasma Al2O3


Film/Plasma Properties

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Effective Charge Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Chemical Composition, Impurities
Analysis: SIMS, Secondary Ion Mass Spectrometry

Characteristic: Photoconductance
Analysis: Photoconductance

Substrates

Silicon

Keywords

Notes

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