Introducing Plasma ALD, LLC's first in-house product.

An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

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First principles mechanistic study of self-limiting oxidative adsorption of remote oxygen plasma during the atomic layer deposition of alumina

Type:
Journal
Info:
Phys. Chem. Chem. Phys., 2018, 20, 22783-22795
Date:
2018-08-17
DOI:
http://dx.doi.org/10.1039/C8CP03495H

Author Information

Name Institution
Glen N. FomengiaTyndall National Institute, University College Cork
M. G. NolanTyndall National Institute, University College Cork
Simon D. ElliottSchrödinger

Films

Plasma Al2O3

Hardware used: Simulation
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

Notes

1280