Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V

Type:
Journal
Info:
IEEE ELECTRON DEVICE LETTERS, VOL. 37, NO. 2, PP. 212-215, 2016
Date:
2015-12-24
DOI:
http://dx.doi.org/10.1109/LED.2015.2512279

Author Information

Name Institution
Man Hoi WongNational Institute of Information and Communications Technology
K. SasakiNational Institute of Information and Communications Technology
A. KuramataNational Institute of Information and Communications Technology
S. YamakoshiNational Institute of Information and Communications Technology
M. HigashiwakiNational Institute of Information and Communications Technology

Films

Plasma Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Substrates

Ga2O3

Notes

558