Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V
Type:
Journal
Info:
IEEE ELECTRON DEVICE LETTERS, VOL. 37, NO. 2, PP. 212-215, 2016
Date:
2015-12-24
Author Information
| Name | Institution |
|---|---|
| Man Hoi Wong | National Institute of Information and Communications Technology |
| K. Sasaki | National Institute of Information and Communications Technology |
| A. Kuramata | National Institute of Information and Communications Technology |
| S. Yamakoshi | National Institute of Information and Communications Technology |
| M. Higashiwaki | National Institute of Information and Communications Technology |
Films
Film/Plasma Properties
Substrates
| Ga2O3 |
Notes
| 558 |