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An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

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Stability of effective lifetime of float-zone silicon wafers with AlOx surface passivation schemes under illumination at elevated temperature

Type:
Conference Proceedings
Info:
Energy Procedia 124 (2017) 146-151
Date:
2017-04-03
DOI:
https://doi.org/10.1016/j.egypro.2017.09.320

Author Information

Name Institution
Tim NieweltFraunhofer Institute for Solar Energy Systems (ISE)
Wolfram KwapilFraunhofer Institute for Solar Energy Systems (ISE)
Marisa SelingerFreiburg Materials Research Center FMF
Armin RichterFraunhofer Institute for Solar Energy Systems (ISE)
Martin C. SchubertFraunhofer Institute for Solar Energy Systems (ISE)

Films

Plasma Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 230C

Film/Plasma Properties

Characteristic: Minority Carrier Lifetime
Analysis: QSSPC, Quasi-Steady-State PhotoConductance Decay
Diagnostic: Sinton WCT-120 Lifetime Tester

Substrates

Silicon

Notes

1129