
Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth
Type:
Journal
Info:
J. Vac. Sci. Technol. A 31, 01A106 (2013)
Date:
2012-10-04
Author Information
Name | Institution |
---|---|
H. B. Profijt | Eindhoven University of Technology |
Mauritius C. M. (Richard) van de Sanden | Eindhoven University of Technology |
Erwin (W.M.M.) Kessels | Eindhoven University of Technology |
Films
Film/Plasma Properties
Characteristic: Electron Temperature, Te
Analysis: Langmuir Probe
Characteristic: Electron Density, ne
Analysis: Langmuir Probe
Characteristic: Ion Energy
Analysis: RFEA, Retarding Field Energy Analyzer
Characteristic: Ion Flux
Analysis: RFEA, Retarding Field Energy Analyzer
Characteristic: OES
Analysis: OES, Optical Emission Spectroscopy
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Film Stress
Analysis: Wafer Curvature
Substrates
Si(100) |
Notes
O2 does not gas react with TMA, Star-Ti, or CoCp2 |
Bias impacts TiO2 phase. Low bias produces anatase while high bias produces rutile. |
RTA in O2 |
62 |