Publication Information

Title:
Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth
Type:
Journal
Info:
J. Vac. Sci. Technol. A 31, 01A106 (2013)
Date:
2012-10-04

Author Information

Name Institution
H. B. ProfijtEindhoven University of Technology
Mauritius C. M. (Richard) van de SandenEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Plasma Al2O3


Plasma CoOx


Plasma TiO2


Film/Plasma Properties

Characteristic: Electron Temperature, Te
Analysis: Langmuir Probe

Characteristic: Electron Density, ne
Analysis: Langmuir Probe

Characteristic: Ion Energy
Analysis: RFEA, Retarding Field Energy Analyzer

Characteristic: Ion Flux
Analysis: RFEA, Retarding Field Energy Analyzer

Characteristic: OES
Analysis: OES, Optical Emission Spectroscopy

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Film Stress
Analysis: Wafer Curvature

Substrates

Si(100)

Keywords

Substrate Biasing
Thin Film
Atomic Layer Deposition
Inductively Coupled Plasma

Notes

O2 does not gas react with TMA, Star-Ti, or CoCp2
Bias impacts TiO2 phase. Low bias produces anatase while high bias produces rutile.
RTA in O2
62