Impurity Gettering by Atomic-Layer-Deposited Aluminium Oxide Films on Silicon at Contact Firing Temperatures

Type:
Journal
Info:
physica status solidi (RRL) - Rapid Research Letters Volume 12, Issue 3, pages 1700430
Date:
2017-12-28
DOI:
http://dx.doi.org/10.1002/pssr.201700430

Author Information

Name Institution
AnYao LiuThe Australian National University
Daniel MacdonaldThe Australian National University

Films

Plasma Al2O3

Hardware used: Beneq TFS-200
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 175C

Film/Plasma Properties

Substrates

Silicon

Notes

1090