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Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C
Type:
Journal
Info:
J. Vac. Sci. Technol. A 32(1), Jan/Feb 2014, 01A107
Date:
2013-11-04
Author Information
| Name | Institution |
|---|---|
| Karsten Henkel | Brandenburg University of Technology |
| Hassan Gargouri | Sentech Instruments GmbH |
| Bernd Gruska | Sentech Instruments GmbH |
| Michael Arens | Sentech Instruments GmbH |
| Massimo Tallarida | Brandenburg University of Technology |
| Dieter Schmeißer | Brandenburg University of Technology |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Fixed Charge Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface State Density
Analysis: I-V, Current-Voltage Measurements
Substrates
| Si(100) |
Notes
| Post deposition anneal |
| SE and XPS of same films in recent publication |
| 11 |